▎ 摘　　要

NOVELTY - The LED has an n-type nitride semiconductor layer arranged on a substrate. An active layer is arranged on the n-type nitride semiconductor layer. A p-type magnesium doped nitride semiconductor layer is arranged on the active layer, where p- type graphene is arranged in the p-type magnesium doped nitride semiconductor layer in form of long film or flake. The active layer comprises a quantum-well layer and an electron barrier layer. USE - LED. ADVANTAGE - The LED has excellent hole mobility, excellent luminous efficiency and excellent nitride semiconductor dispersion degree. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an LED.