• 专利标题:   Preparation method of single crystal graphene conductive ink involves obtaining predetermined amount of single crystal graphene, and preparing ink based on predetermined amount of single crystal graphene.
  • 专利号:   CN112920645-A
  • 发明人:   CHEN J, LIU W
  • 专利权人:   HENAN QIYING GRAPHENE EQUIP MFG CO LTD
  • 国际专利分类:   C09D011/52, C30B025/00, C30B029/02
  • 专利详细信息:   CN112920645-A 08 Jun 2021 C09D-011/52 202163 Pages: 8 Chinese
  • 申请详细信息:   CN112920645-A CN10093083 22 Jan 2021
  • 优先权号:   CN10093083

▎ 摘  要

NOVELTY - Preparation method of single crystal graphene conductive ink involves obtaining a predetermined amount of single crystal graphene, and preparing ink based on predetermined amount of single crystal graphene. USE - The method is useful for preparation of single crystal graphene conductive ink (claimed). ADVANTAGE - The method improves the conductivity of graphene conductive ink using single crystal graphene as conductive filler, reduces the strong scattering of electrons caused by grain boundary defects caused by the use of polycrystalline graphene, and solves the technical problem of low conductivity of the polycrystalline graphene conductive ink.