▎ 摘　　要

NOVELTY - A semiconductor device has channel layer which consist of a semiconductor graphene, wiring containing source, drain and electrode layer of gate and gate-electrode layer which is insulated by channel and gate insulating layer. The electrode layer and channel layer is in the same plane. The wiring contains metal graphene. The graphene has p-type conduction by substituting carbon structure by boron, aluminum, gallium and/or indium. The graphene has n-type conduction by substitution carbon structure by nitrogen, phosphorus, arsenic and/or antimony. USE - Semiconductor device such as complementary metal oxide semiconductor used in field effect transistor. ADVANTAGE - The semiconductor device is economical and reduces the power consumption. The manufacturing method of semiconductor device is simple. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the manufacture method of semiconductor device.