• 专利标题:   Method for transferring graphene for use in electronic device, involves arranging graphene layer on substrate, and performing thermal processing processes about substrate.
  • 专利号:   KR2016031292-A
  • 发明人:   KIM D, CHOI M, PARK I
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   H01B013/00, H01B005/14
  • 专利详细信息:   KR2016031292-A 22 Mar 2016 H01B-005/14 201626 Pages: 14 English
  • 申请详细信息:   KR2016031292-A KR121176 12 Sep 2014
  • 优先权号:   KR121176

▎ 摘  要

NOVELTY - The method involves forming a graphene layer on a metallic layer (15). A sacrificial layer (30) is formed on the graphene layer. A stamp layer (40) is formed on the sacrificial layer. The metallic layer is removed. The graphene layer is arranged on a substrate. The first thermal processing process about the substrate is performed. The second thermal process about the substrate is performed. USE - Method for transferring graphene for use in electronic device (claimed). ADVANTAGE - The graphene layer or the graphene pattern are easily transferred to the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the graphene transfer process. Metallic layer (15) Graphene pattern (25a) Sacrificial layer (30) Stamp layer (40)