• 专利标题:   Short wave infrared photodetector based on graphene materials and organic complexes includes a substrate, a dielectric layer, a graphene material layer and a light absorption layer which are stacked in sequence.
  • 专利号:   CN112687800-A
  • 发明人:   XIE L, IQBAL M A
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   H01L051/42, H01L051/46, H01L051/48
  • 专利详细信息:   CN112687800-A 20 Apr 2021 H01L-051/42 202143 Pages: 15 Chinese
  • 申请详细信息:   CN112687800-A CN10990214 17 Oct 2019
  • 优先权号:   CN10990214

▎ 摘  要

NOVELTY - Short wave infrared (SWIR) photodetector based on graphene materials and organic complexes includes a substrate, a dielectric layer, a graphene material layer and a light absorption layer which are stacked in sequence. The light absorbing layer is an organic complex layer formed by tetrathiafulvalene and chloroaniline, which is denoted as tetrathiafulvalene (TTF) and chloroaniline (CA) organic complex layer. USE - SWIR photoelectric detector based on graphene material and organic complex. ADVANTAGE - The detector can be prepared at room temperature with low cost, and develops a direction for expandable high performance SWIR light detection, and has great commercial potential. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a photodetector, which involves preparing a graphene material layer on the surface of the dielectric layer, and forming the dielectric layer on the substrate, then preparing a solution of tetrathiafulvalene solution and chloroaniline, dipping the device into the solution, and heating to form a TTF and CA organic complex layer on the surface of the graphene material layer.