▎ 摘　　要

NOVELTY - Preparing large-scale wafer transparent gallium nitride HEMT device involves preparing transparent gallium nitride HEMT device wafers on large-scale silicon wafers, turning over the transparent gallium nitride HEMT device wafer and temporarily bonding on the carrier, removing the silicon substrate on the back of the transparent gallium nitride HEMT device wafer, bonding the transparent gallium nitride HEMT device wafer on the transparent substrate, and debonding the temporary bonding. USE - Method for preparing large-scale wafer transparent gallium nitride HEMT device used in radio frequency device and power electronic device field. ADVANTAGE - The method ensures the whole transparency of the whole device, and avoids directly processing of the device on the transparent substrate wafer after finishing epitaxial growth and device preparation on the silicon substrate.