▎ 摘　　要

NOVELTY - Forming a graphene layer involves heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, where the further gas is a carbon etching gas; and repeating a) and b) at least one time. USE - For forming a graphene layer (claimed) used in radio-frequency transistors and for forming transparent highly conductive and flexible electrodes, such as for displays. ADVANTAGE - The presence of multilayer defects can be reduced or removed entirely by a pulsed chemical vapor deposition (CVD) process. The graphene formation continues without carbon being dissolved at the point of the defect. Thus there is significantly reduced number of carbon atoms trapped in the copper layer, reducing the presence of multilayer defects in the graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) apparatus for forming a graphene layer comprising a reaction chamber containing a support layer; at least one heating element for heating the support layer; and a control device configured to control the formation of the graphene layer on a surface of the support layer; and (2) non-transient computer readable medium storing a instructions that, when executed by a processor, controls a process of growing a graphene layer on a surface of a support layer.