▎ 摘　　要

NOVELTY - A patterned graphene is prepared by providing a silicon carbide base, forming an accommodating passage in the base, providing a catalyst and an insulating substrate, placing the catalyst in the accommodating passage, and placing the sandwich structure in a heating device and carrying out a catalytic reaction, so that the base is decomposed under the action of the catalyst, thus obtaining patterned germanium on the substrate. The accommodating passage comprises a first patterned trench on the first side of the base; a second patterned trenches on the second side of base; and a connection through hole. USE - Method for preparing patterned graphene for fabrication of graphene -based micro electronic devices (claimed). ADVANTAGE - Patterned graphene is directly formed on the insulating substrate, so it does not need to be transferred again, which avoids contaminating the graphene and damaging its structure. Patterns of the graphene pattern can be directly controlled by controlling the shape of the first and second patterned trenches on the upper and lower sides of the silicon carbide base, and there is no need to process the graphene by photo-lithography, ion etching or other processes, thus avoiding damaging the graphene. Because of the absence of the need to transfer the graphene, the method avoids the problem that the graphene with a large size and complex patterns is easily damaged during the transfer process.