▎ 摘　　要

NOVELTY - Preparation of silicon carbide substrate-based graphene field-effect transistor array involves epitaxially growing monolayer graphene on a silicon carbide substrate, transferring a diblock copolymer of styrene-methyl methacrylate to the monolayer graphene surface as a mask, etching with diblock copolymer, obtaining graphene nanobelts, depositing yttrium metal film on graphene nanobelts, growing hafnium oxide film on yttrium metal film, spin-coating photoresist on the surface of product, transferring pattern on the mask onto the photoresist, and forming titanium/gold electrode. USE - Preparation of silicon carbide substrate-based graphene field-effect transistor array (claimed). ADVANTAGE - The method enables preparation of silicon carbide substrate-based graphene field-effect transistor array having high mobility, by carrying out atomic layer deposition of high-dielectric constant gate dielectric film on the graphene surface and avoiding interface scattering. DETAILED DESCRIPTION - Preparation of silicon carbide substrate-based graphene field-effect transistor array involves obtaining a silicon carbide substrate having smooth surface in an induction heating furnace, epitaxially growing monolayer graphene on the substrate, preparing an anionic polymerized diblock copolymer of styrene-methyl methacrylate, transferring the diblock copolymer to the monolayer graphene surface as a mask, etching with the diblock copolymer, completely etching monolayer graphene with methyl methacrylate, removing residual styrene, obtaining graphene nanobelts, depositing yttrium metal film on the surface of the graphene nanobelts as a buffer layer, growing hafnium oxide film on the surface of the yttrium metal film as a gate dielectric layer, obtaining a hafnium oxide film/yttrium metal film/graphene nanobelt/silicon carbide structure, uniformly spin-coating photoresist on the surface of the resultant product, transferring pattern on the mask onto the photoresist, forming titanium/gold electrode as drain electrode, source electrode and gate electrode by electron beam lithography.