▎ 摘　　要

NOVELTY - A method for manufacturing a power transistor includes: sequentially forming an etching stop layer and a secondary emitter layer on a semiconductor substrate; forming an InGaP layer and a graphene composite layer on the secondary emitter layer, and the graphene composite layer covers the InGaP layer; providing an etching mask on the graphene composite layer to define a collector area; removing the etching mask; sequentially form a GaAs composite layer and a surface layer on the graphene composite layer; removing part of the graphene composite layer, part of the GaAs composite layer and part of the surface layer to expose part of the InGaP layer, where the remaining GaAs composite layer and surface layer are used as a collector, and the remaining and exposed graphene composite layer is used as a base; and implanting boron ions on the exposed InGaP layer to form a emitter. A power transistor is also provided, which has better current drive capability and higher power drive efficiency.