▎ 摘　　要

NOVELTY - Preparation of bismuth-doped tin selenide/redox graphene composite film, involves dissolving bismuth nitrate in stannous chloride solution, to obtain mixed solution, adding mixed solution to graphene oxide aqueous solution, to obtain tin ion aqueous solution, preparing selenium ion aqueous solution, placing cleaned substrate in deposition vessel, adding tin ion aqueous solution and selenide ion aqueous solution, and taking out substrate, finishing film deposition, and drying deposited film, to obtain crystallized bismuth-doped tin selenide/redox graphene composite film. USE - Preparation of bismuth-doped tin selenide/redox graphene composite film (claimed). ADVANTAGE - The bismuth-doped tin selenide/redox graphene composite film is obtained with high light absorption, low resistivity, excellent electrical conductivity, high preparation efficiency and excellent film quality. DETAILED DESCRIPTION - Preparation of bismuth-doped tin selenide/redox graphene composite film, involves dissolving bismuth nitrate in stannous chloride solution having a concentration of 0.02 mol/L, to obtain mixed solution, adding the mixed solution to 11 vol.% graphene oxide aqueous solution having a concentration of 2 mg/L to obtain tin ion aqueous solution, preparing selenium ion aqueous solution having a concentration of 0.019 mol/L, placing cleaned substrate in a deposition vessel at room temperature, adding an equal volume of tin ion aqueous solution and selenide ion aqueous solution to the deposition vessel, and taking out substrate after 20 minutes, and finishing film deposition with deionized water for 5-10 times to obtain deposited film, drying deposited film at 100 degrees C for 1 hour, or irradiating with 25-40 W UV lamp for 2-3 hours, to obtain crystallized bismuth-doped tin selenide/redox graphene composite film.