• 专利标题:   Manufacture of graphene thin film for e.g. semiconductor material involves coating solution or dispersion liquid of conductive polymer on surface of metal material, forming coating film, and performing microwave process.
  • 专利号:   JP2013087023-A
  • 发明人:   UEDA M, OMOTA A
  • 专利权人:   KRI INC
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2013087023-A 13 May 2013 C01B-031/02 201334 Pages: 5 Japanese
  • 申请详细信息:   JP2013087023-A JP230242 20 Oct 2011
  • 优先权号:   JP230242

▎ 摘  要

NOVELTY - Graphene thin film is manufactured by coating solution or dispersion liquid of conductive polymer on surface of metal material e.g. copper, cobalt, nickel, or ruthenium, forming coating film, and performing microwave process to form graphene thin film on metal material surface. USE - Manufacture of graphene thin film for semiconductor material, transparent electrically conductive material, and thermally conductive material used for flexible integrated circuit, transparent electrode, touch panel, and heat sink. ADVANTAGE - Graphene thin film can be easily manufactured at low cost.