▎ 摘　　要

NOVELTY - The structure has a channel whose upper and lower surfaces are partially or completely covered with air or vacuum contact. The channel is provided with an air gap. A gate electrode is overlapped with a source electrode and a drain electrode on a projection. The source electrode and the drain electrode are located above the channel. A bottom and a side surface of the air gap below the channel are surrounded by medium when the gate electrode is located below the channel. The source electrode and the drain electrode are located below the channel. Two sides of the gate electrode are supported by a strut composed of a medium. USE - Air gap graphene field effect transistor structure. ADVANTAGE - The upper and lower portions of the channel are provided with the air gap for forming a suspension channel so as to reduce carrier mobility caused by graphene channel and material contact, thus keeping high mobility of carrier in graphene, and reducing degradation of graphene surface characteristic, improving electrical characteristics of the graphene device. The structure realizes spin coating of graphene oxide to the channel position, performs high temperature reduction to obtain graphene, forms the graphene channel so as to improve operability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an air gap graphene field effect transistor structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an air gap graphene field effect transistor structure. (Drawing includes non-English language text).