• 专利标题:   Photodiode comprises semiconductor substrate in photodetector device, insulating layer formed on semiconductor substrate, electrode formed on insulating layer, graphene on substrate, insulating layer, where insulating layer comprises gel.
  • 专利号:   WO2021187634-A1, KR2022154693-A, EP4123728-A1, US2023139586-A1
  • 发明人:   SUNG J, RHO J, SUNG J W
  • 专利权人:   LG ELECTRONICS INC, LG ELECTRONICS INC, LG ELECTRONICS INC
  • 国际专利分类:   H01L031/0236, H01L031/028, H01L031/0368, H01L031/0216, H01L031/0224, H01L031/0352, H01L031/108, H01L031/18
  • 专利详细信息:   WO2021187634-A1 23 Sep 2021 202182 Pages: 22
  • 申请详细信息:   WO2021187634-A1 WOKR003668 18 Mar 2020
  • 优先权号:   EP925202, WOKR003668, KR731963, US17912308

▎ 摘  要

NOVELTY - Photodiode comprises semiconductor substrate (110), insulating layer (120) formed on semiconductor substrate, electrode (130) formed on the insulating layer, graphene (140) formed on the semiconductor substrate, the insulating layer, and electrode, where the insulating layer comprises an ion gel. USE - Photodiode used in photodetector device (claimed). ADVANTAGE - The photodiode improves the photoresponse and detectability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing photodiode, which involves forming an insulating layer on a semiconductor substrate, forming an electrode on the insulating layer and forming graphene on the semiconductor substrate, the insulating layer, and the electrode, where the insulating layer includes an ion gel. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photodiode. Semiconductor substrate (110) Insulating layer (120) Electrode (130) Graphene (140)