▎ 摘　　要

NOVELTY - The method involves forming photo-resist pattern on a glass substrate. A dry etching process is performed. The photo-resist pattern is removed. Stone graphene material is obtained. Another dry etching process is performed. Patterned graphene material is obtained. The soaking patterned graphene is soaked in acid etching liquid for 100-140 seconds. Patterned grapheme resistance rate is reduced after performing soaking process. PH of the acid etching liquid is 1-3. The acid etching liquid comprises heavy metal inorganic acid and non-metal inorganic acid. USE - Method for preparing patterned graphene material that is utilized in an array substrate of a display device (all claimed). ADVANTAGE - The method enables reducing patterned grapheme resistance rate changing issues and satisfying photolithography requirement. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) an array substrate (2) a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing patterned graphene material.'(Drawing includes non-English language text)'