• 专利标题:   Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.
  • 专利号:   US2022411268-A1, US11618681-B2
  • 发明人:   JACOBBERGER R M, WAY A J, ARNOLD M S
  • 专利权人:   WISCONSIN ALUMNI RES FOUND
  • 国际专利分类:   C01B032/186, C30B029/02, C30B029/54, C30B029/60, B82Y040/00
  • 专利详细信息:   US2022411268-A1 29 Dec 2022 C01B-032/186 202303 English
  • 申请详细信息:   US2022411268-A1 US360108 28 Jun 2021
  • 优先权号:   US360108

▎ 摘  要

NOVELTY - Growing graphene nanoribbon involves depositing aromatic molecular seeds from the gas phase onto a surface of a growth substrate, and growing graphene nanoribbon from the aromatic molecular seeds via chemical vapor deposition. USE - Method for growing graphene nanoribbon. ADVANTAGE - The method can promote anisotropic directional growth of graphene nanoribbons by performing chemical vapor deposition (CVD) growth of graphene, and has armchair edge and high aspect ratios can be grown with a very low size polydispersity.