• 专利标题:   Working function adjusting-type transistor for use in e.g. semiconductor integrated circuit of electronic device in electronic industry, has main body made of metal, silicone, graphene material and magnetic particle.
  • 专利号:   WO2015099389-A2, KR2015074499-A, KR2015075063-A, KR2015075074-A, KR2015075075-A, KR2015075076-A, KR2016010642-A, KR2016011689-A, KR2016011690-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   H01L029/16, H01L029/78, H01L029/812, C01B031/04, H01L041/08, H01L041/18, H01L041/22, H01L041/04, H01L041/113, H01L041/187, H01L043/02, H01L043/10, H01L043/12
  • 专利详细信息:   WO2015099389-A2 02 Jul 2015 H01L-029/16 201548 Pages: 65
  • 申请详细信息:   WO2015099389-A2 WOKR012673 23 Dec 2014
  • 优先权号:   KR162339, KR074610, KR084239, KR084288, KR084415, KR005252, KR005264, KR005270

▎ 摘  要

NOVELTY - The transistor has main body made of metal, silicone, bending function featured grapheme material and magnetic particle. Electricity is charged in piezo material based on electrostatic level of an obstacle regulating circuit. A lower end portion of graphene material is arranged in the obstacle regulating circuit. A bonding layer, an elastomer layer, a vacuum layer and an air layer are formed on upper end portion of the graphene material. Contact angle and height of Schottky obstacle are controlled. USE - Working function adjusting-type transistor for use in semiconductor integrated circuit (IC), CPU, memory and microprocessor (all claimed) of electronic device in an electronic industry. ADVANTAGE - The transistor is made of the graphene material and magnetic particle so as to easily control work function, level and Schottky obstacle height of the transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a side perspective view of a working function adjusting-type transistor.