• 专利标题:   Interconnection structure useful for semiconductor device, has more than one first conductive features disposed in first dielectric layer, where more than one first conductive features include first metal, and multiple graphene layers include second metal, which is different from first metal.
  • 专利号:   CN115566000-A, US2023062128-A1, TW202310017-A
  • 发明人:   SUI X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   H01L021/768, H01L023/528, H01L023/532, H01L023/522, H01L021/28, H01L021/44
  • 专利详细信息:   CN115566000-A 03 Jan 2023 H01L-023/532 202308 Chinese
  • 申请详细信息:   CN115566000-A CN10956750 10 Aug 2022
  • 优先权号:   US460537

▎ 摘  要

NOVELTY - The structure has more than one first conductive component disposed in first dielectric layer, where more than one first conductive component includes first metal. Multiple graphene layers are disposed on each of the first conductive component, where the multiple graphene layers include second metal, which is different from the first metal. USE - The structure is useful for a semiconductor device i.e. integrated circuit (IC). ADVANTAGE - The carbon-containing layer is set between each of the first conductive component and the first dielectric layer, where the top part of the inclined part has a first thickness, and the bottom part of an inclined portion has a second thickness, thus enables to form the interconnection structure in a simple and cost efficient manner, and improves the electrical properties of the conductive components, and also improves the reliability of the electrical connection between the first metal layer and the second metal layer, and thus improves the performance of the interconnections structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side views of interconnect structures at various stages of fabrication.