▎ 摘　　要

NOVELTY - The method involves growing silicon dioxide layer (2) on a mono-crystalline silicon substrate (1). A tubular furnace placed with sample is vacuumized. The mixed gas is supplied to furnace. The high temperature annealing is performed on sample using hydrogen fluoride to form graphene at interface of catalytic metal layer and polymer layer of substrate. A source electrode (30), drain electrode (31), and gate electrode (7) are formed on high-k gate dielectric thin film (6) formed on window area using graphene oxide. A back grid electrode (8) is formed over the film at the back of substrate. USE - Method of preparing double-gate MOSFET based graphene used in microelectronics field and solid electronic field. DETAILED DESCRIPTION - The layer of polymer is spin coated on silicon dioxide layer as carbon source for preparing graphene. The catalytic metal layer is formed on polymer layer of substrate using electron beam evaporation process. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating process of preparing double-gate MOSFET based graphene. Mono-crystalline silicon substrate (1) Silicon dioxide layer (2) High-k gate dielectric thin film (6) Gate electrode (7) Back grid electrode (8) Source electrode (30) Drain electrode (31)