• 专利标题:   Graphene structure used in electronic device, comprises substrate, and directly grown graphene directly grown on surface of substrate and has controlled surface energy, which has increased surface energy of directly grown graphene.
  • 专利号:   US2021210346-A1, KR2021088300-A
  • 发明人:   LEE C, LEE S, SHIN H, BYUN K, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE S Y, LEE C S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C23C016/26, C23C016/50, H01L021/02, H01L029/16, C23C016/505, C23C016/56
  • 专利详细信息:   US2021210346-A1 08 Jul 2021 H01L-021/02 202175 English
  • 申请详细信息:   US2021210346-A1 US923478 08 Jul 2020
  • 优先权号:   KR001570

▎ 摘  要

NOVELTY - Graphene structure 10 comprises substrate 11, and directly grown graphene 20, 21 that is directly grown on a surface of the substrate and has a controlled surface energy. The controlled surface energy of the directly grown graphene has an increased surface energy of the directly grown graphene. USE - Graphene structure used in electronic device. ADVANTAGE - The graphene structure has chemical stability, large surface area, and increased surface energy, and graphene is applied to semiconductor devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) Method of forming graphene structure, involves preparing a substrate; directly growing graphene on a surface of the substrate using a plasma enhanced chemical vapor deposition (PECVD) process, and the directly growing graphene including changing a surface energy of a graphene to provide a directly grown graphene having a controlled surface energy. (2) Electronic device comprises the graphene structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of graphene structure. Graphene structure (10) Substrate (11) Directly grown graphene (20, 21) Dopant (25)