• 专利标题:   FET apparatus, has channel made of three-dimensional graphene foam, and graphene-based transistor formed on substrate, where variation in property of graphene-based transistor forms basis for measurement by sensor e.g. biological sensor.
  • 专利号:   WO2015200758-A2, WO2015200758-A3, WO2015200758-A9, US2017200909-A1
  • 发明人:   KABIRI AMERI ABOOTORABI S, SINGH P K, SONKUSALE S, KABIRI A A S
  • 专利权人:   UNIV TUFTS
  • 国际专利分类:   H01L051/10, G01N027/414, H01L029/78, H01L051/30, A61B005/145, A61B005/1473, H01L051/00, H01L051/05
  • 专利详细信息:   WO2015200758-A2 30 Dec 2015 H01L-051/10 201609 Pages: 21 English
  • 申请详细信息:   WO2015200758-A2 WOUS037897 26 Jun 2015
  • 优先权号:   US017458P, US15321296

▎ 摘  要

NOVELTY - The apparatus has a channel made of three-dimensional graphene foam. A hydrophilic agent is formed on the graphene, where variation in a property of a graphene-based transistor (22) forms a basis for a measurement by a sensor e.g. biological sensor, strain sensor, pH sensor and chemical sensor. The biological sensor is configured for in-vivo measurements. A scaffold incorporates the graphene-based transistor. The graphene-based transistor is formed on a substrate (24). Graphene layers are naturally suspended above the substrate. USE - FET apparatus. ADVANTAGE - The transistor includes metal contacts for a source terminal and a drain terminal such that the graphene layers in the foam are naturally suspended above the substrate, thus suppressing undesirable substrate effects by plague conventional two-dimensional graphene transistors and achieving high carrier mobility. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of a liquid gated graphene transistor. Graphene-based transistor (22) Substrate (24) Active channel layer (26) Source terminal (28) Drain terminal (30)