▎ 摘　　要

NOVELTY - The continuous chemical vapor deposition (CVD) thin film manufacturing device has a sample introducing chamber, a heating chamber (3), a process chamber (1,4) and a cooling chamber (5). The sample introducing chamber is used for sending a substrate layer into the heating chamber under the vacuum environment. The heating chamber is used for heating the substrate layer and sending into the process chamber. The process chamber is used for vapor deposition of the heated substrate layer to obtain a film. The film is sent into the cooling chamber. The cooling chamber is used for cooling the film. USE - Continuous CVD thin film manufacturing device for use in graphene continuous growth furnace for continuous growth of single-roll copper foil. ADVANTAGE - The invention has low processing difficulty, low manufacturing cost, convenient maintenance and replacement in the later stage, low maintenance cost, and is beneficial to the advancement of industrialization. The number and arrangement of each chamber of the invention can be randomly combined according to the technical requirement, and it is flexible and variable. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing thin film by the continuous CVD thin film manufacturing device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the continuous CVD thin film manufacturing device. 1,4Process chambers 2Isolation valve 3Heating chamber 5Cooling chamber