• 专利标题:   Preparation of graphene, involves taking substrate, depositing metal oxide layer on substrate, depositing metal layer over metal oxide layer, patterning metal layer and depositing graphene layer on patterned metal layer.
  • 专利号:   CN107840325-A
  • 发明人:   CHENG C, KANG P
  • 专利权人:   EVERDISPLAY OPTRONICS SHANGHAI LTD
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN107840325-A 27 Mar 2018 C01B-032/186 201827 Pages: 11 Chinese
  • 申请详细信息:   CN107840325-A CN10832594 19 Sep 2016
  • 优先权号:   CN10832594

▎ 摘  要

NOVELTY - Preparation of graphene, involves taking substrate, depositing metal oxide layer on substrate, depositing metal layer (A) over the metal oxide layer and patterning metal layer (A), depositing graphene layer on patterned metal layer (A), aligning graphene layer with interface of graphene layer of device to be transferred, using laser to break link between two layers between substrate and metal layer (A), transferring graphene layer correspondingly to interface, removing all portions of graphene layer on metal layer side (A) and retaining only graphene layer on device. USE - Preparation of graphene. ADVANTAGE - The method enables preparation of graphene with high quality by simple process. DETAILED DESCRIPTION - Preparation of graphene, involves (1) taking substrate, depositing metal oxide layer on substrate, (2) depositing metal layer (A) over the metal oxide layer and patterning metal layer (A), (3) depositing graphene layer on patterned metal layer (A), (4) aligning graphene layer with interface of graphene layer of device to be transferred, using laser to break link between two layers between substrate and metal layer (A), transferring graphene layer correspondingly to interface, (5) removing all portions of graphene layer on metal layer side (A) and retaining only graphene layer on the device.