▎ 摘　　要

NOVELTY - The method involves forming (S101) a contact electrode on a front face of a substrate of a contact hole. The contact hole comprises a gate contact hole and a first contact hole. A graphene layer is formed (S102) on the contact hole, and forms a gate contact electrode and a first contact electrode to a graphene filler metal. A metal is deposited (S103) on the back side of the substrate. A second contact electrode is formed. USE - Method for preparing contact electrode. ADVANTAGE - The control problem of the contact electrode is suppressed, the on resistance of the device is reduced, the reverse recovery time is shortened and switching loss is reduced. The current gain of the device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a MOSFET power device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for preparing contact electrode. (Drawing includes non-English language text) Step for forming a contact electrode on a front face of a substrate of a contact hole (S101) Step for forming a graphene layer on the contact hole, and forms a gate contact electrode and a first contact electrode to a graphene filler metal (S102) Step for depositing metal on back side of substrate (S103)