▎ 摘　　要

NOVELTY - Preparing wafer-level single crystal copper foil comprises cutting the edges of the polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing the polycrystalline copper foil with notches in hydrogen atmosphere to obtain single crystal copper foil. USE - The method is useful for preparing wafer-level single crystal copper foil. ADVANTAGE - The method has simple process and high efficiency, and saves energy. The single crystal copper has large area, high single crystal degree and high flatness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing regular graphene, comprising placing single crystal copper foil in an atmosphere of methane and hydrogen, and growing the graphene on the surface of the single crystal copper foil.