• 专利标题:   Preparing wrinkle-free graphene film by ultrasonically cleaning metal substrate with acetone, absolute ethanol and deionized water, and drying, placing in chemical vapor deposition system, feeding hydrogen and argon, and naturally cooling.
  • 专利号:   CN112707389-A
  • 发明人:   LI J, GUO Z
  • 专利权人:   UNIV HEBEI TECHNOLOGY
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN112707389-A 27 Apr 2021 C01B-032/186 202142 Pages: 11 Chinese
  • 申请详细信息:   CN112707389-A CN10018341 07 Jan 2021
  • 优先权号:   CN10018341

▎ 摘  要

NOVELTY - Method for preparing a wrinkle-free graphene film involves (a) ultrasonically cleaning the metal substrate with acetone, absolute ethanol and deionized water, and drying with nitrogen, (b) placing the dried copper foil into a quartz boat, placing in a chemical vapor deposition system together, and evacuating to below 1 Pa, (c) feeding the mixed gas of hydrogen and argon into the chemical vapor deposition system, starting the heating program, increasing the temperature from room temperature to 1060-1140 degrees C with 60-70 minutes, and annealing at 30-60 minutes, (d) feeding a gaseous carbon source into the chemical vapor deposition system, and growing graphene on the surface of the metal substrate, and (e) after the growth is completed, turning-off the gaseous carbon source, and naturally cooling the system to room temperature under the protection of hydrogen and argon, taking out the sample to obtain the product. USE - The method is used for preparing a wrinkle-free graphene film. ADVANTAGE - The method grows wrinkle-free graphene film with several additional layers of crystal domains by adjusting the hydrogen partial pressure factor in the chemical vapor deposition method, and weakens the van der Waals interaction between the graphene film and the substrate, while forming additional layer.