▎ 摘　　要

NOVELTY - The device has a supporting substrate formed with a first heterojunction layer and a through hole i.e. round hole or square hole, where the first heterojunction layer is a metal material layer, a ferromagnetic material layer and a semiconductor material layer. A graphene layer is formed on a surface of the supporting substrate. The first heterojunction layer is arranged in the through hole. The first heterojunction layer and the graphene layer are connected together to form a first heterojunction. A second heterogeneous layer is formed on surface of the graphene layer. The second heterojunction layer and the graphene layer are connected together to form a second heterojunction. USE - Graphene vertical hetero-junction device. ADVANTAGE - The device realizes interface oxidation and absorption function in a smooth manner, and has small resistance and oxidation, compact structure, low hetero-junction device manufacturing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene vertical hetero-junction device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene vertical hetero-junction device. '(Drawing includes non-English language text)'