▎ 摘　　要

NOVELTY - The method involves removing material of a two-dimensional honeycomb structure on a heat-treated semiconductor substrate. Graphene oxide dispersion is deposited on a dopant implanted semiconductor substrate such that graphene oxide dispersion is deposited on the dopant implanted semiconductor substrate, where dopant is nitrogen, phosphorus, aluminum, and boron. Deposited graphene oxide dispersion is removed, where removing process comprises removing the material of the two-dimensional honeycomb structure with solution comprising hydrogen fluoride solution and de-ionized water. USE - Method for manufacturing a semiconductor device i.e. silicon carbide MOSFET (claimed). ADVANTAGE - The method enables providing semiconductor with reduced interfacial properties. The method enables reducing interfacial charge trapping density and device surface leakage current to improve device resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for manufacturing a semiconductor device. '(Drawing includes non-English language text)'