▎ 摘　　要

NOVELTY - Forming bernal-stacked graphene layers involves depositing metal layer with grain boundary on substrate, performing direct-annealing the metal layer to remove impurities and recrystallise the metal layer in the form of groove-like structure, forming the graphene layers in bernal-stacking on the metal layer by catalytic surface reactions with gas and benzene precursors in the ratio of 250 to 3 cm3 min-1 at temperature of 200-700 degrees C. The direct-annealing metal layer is performed at temperature of 200-700 degrees C in inert or reducing atmosphere. USE - Method for forming bernal-stacked graphene layers. ADVANTAGE - The method enables to form bernal-stacked graphene layers that is cost effective.