• 专利标题:   Semiconductor device comprises a substrate, semiconductor layer comprising a two-dimensional (2D) material having a layered structure, and adhesive layer between the substrate and semiconductor layer and having adhesiveness to 2D material.
  • 专利号:   US2022238721-A1, KR2022107576-A
  • 发明人:   YOO M, SHIN H, KWON J, LEE E, SEOL M, NGUYEN V L, SHIN H J, YOO M S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L029/786, H01L021/02, H01L029/16
  • 专利详细信息:   US2022238721-A1 28 Jul 2022 H01L-029/786 202264 English
  • 申请详细信息:   US2022238721-A1 US505955 20 Oct 2021
  • 优先权号:   KR010354

▎ 摘  要

NOVELTY - A semiconductor device comprises a substrate (10); a semiconductor layer (30) comprising a two-dimensional (2D) material having a layered structure; and an adhesive layer (20) between the substrate and the semiconductor layer and having adhesiveness to the 2D material. USE - A semiconductor device. ADVANTAGE - The semiconductor devices have improved adhesive force at an interface between 2D material and another material layer, high performance by including a 2D material, and high performance and operation characteristics. The semiconductor device having a vertical-type structure using a 2D material may exhibit a relatively high current density even at a low input voltage compared to a horizontal type semiconductor device, and thus, may be used as a low power semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor device including a 2D material. Substrate (10) Surface (11) Adhesive layer (20) Semiconductor layer (30)