▎ 摘　　要

NOVELTY - A nickel film of thickness 100-600 nm is formed on one silicon substrate. The graphene is grown on nickel film. The nickel film is etched and the formed graphene is transferred to other silicon substrate. An electric field is applied to cavity so that electron distribution orientation changes and the chemical activity of graphene surface is strengthened. The initial adsorption of atomic layer deposition on graphene surface is finished. A high K gate medium is deposited on graphene surface atomic layer. USE - Method for depositing high K gate medium such as high dielectric constant material (claimed) on graphene surface atomic layer in manufacture of carbon-based integrated circuit. ADVANTAGE - A delocalization phi bond of the graphene surface is destroyed and the electron distribution orientation is changed, under the induction of the electric field, so that uniform high K gate medium is directly deposited on graphene surface atomic layer under the condition of not precipitating a buffer layer in advance. Hence the deposition process is simplified and electrical properties of graphene surface is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the method for depositing high K gate medium on graphene surface.