▎ 摘　　要

NOVELTY - Near infrared photoelectric detector based on graphene/gallium arsenide schottky junction comprises an n-type gallium arsenide substrate back is deposited with a back electrode and the front surface is deposited with an insulating layer. The insulating layer is formed with a window area by etching, the alumina passivation layer is evaporated and plated on the window region. The insulating layer is provided with an anode, the alumina passivation layer is provided with a graphene layer and a portion of the graphene layer and the anode contacts the graphene layer is coated with silver nano particles. The back electrode is a titanium/platinum/gold electrode. The anode is a silver electrode. USE - The near infrared photoelectric detector based on graphene/gallium arsenide schottky junction is useful in solar cell field and photoelectric detection and solar field. ADVANTAGE - The detector: combines the passivation effect of the alumina and the plasma enhanced effect of silver nano particles to improve the performance of the device; reduces the device dark current; and increases the light current to response degree with improved detection rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing near infrared photoelectric detector based on graphene/gallium arsenide Schottky junction. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the near infrared photoelectric detector based on graphene/gallium arsenide Schottky junction.