▎ 摘　　要

NOVELTY - The cell has a cell main body provided with an gold/platinum back electrode, a n-doped Si base region, a graphene layer, a silver nano-particle array, a n-doped indium gallium phosphide back-reflecting layer, a n-doped gallium arsenide base region, a graphene layer and a silver electrode, where a thickness of the Si base region is 50 to 500 m. USE - Dual-junction Si/graphene or gallium arsenide/graphene Schottky junction solar cell. ADVANTAGE - The cell has simple preparation process, low production cost, less environmental pollution and broad application prospects. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a dual-junction Si/graphene or gallium arsenide/graphene Schottky junction solar cell manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a dual-junction Si/graphene or gallium arsenide/graphene Schottky junction solar cell.