• 专利标题:   Method for transferring graphene on e.g. hydrophile board, involves etching sacrificial layer of metal support layer surface, evaporating metal support layer, and transferring graphene located on sacrificial layer surface on substrate.
  • 专利号:   KR2016020105-A, KR1656480-B1
  • 发明人:   KIM C S, CHA M J
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   H01B013/00, H01B005/14, C01B031/02, C01B031/04
  • 专利详细信息:   KR2016020105-A 23 Feb 2016 201623 Pages: 16 English
  • 申请详细信息:   KR2016020105-A KR105008 13 Aug 2014
  • 优先权号:   KR105008

▎ 摘  要

NOVELTY - The method involves transcribing graphene positioned at a painted surface. A metal support layer is removed from the graphene. The graphene is floated in solution by a coating. The graphene positioned in a metal support layer surface. A sacrificial layer of the metal support layer surface is etched. The metal support layer is evaporated. The graphene located on a sacrificial layer surface is transferred on a desired substrate. An additional metal support layer is formed on the support layer. The coating is poly-dimethyl siloxane, poly urethane-acrylate or perfluoropolyether. USE - Method for transferring graphene on a substrate e.g. hydrophile board and hydrophobicity substrate. ADVANTAGE - The method enables improving research and commercialization of graphene patterns with a positional limit. The method enables additional inclusion of the metal support layer without the need for a separate pattern when a pattern of the metal support layer is difficult to maintain the form of the metal support layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a substrate during transferring graphene on the substrate.