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  • 专利标题:   Preparation of silicon carbide nanowire comprises mixing silicon and silicon dioxide, adding graphene, mixing, placing in vacuum sintering furnace filled with argon, vacuum sintering and cooling to room temperature.
  • 专利号:   CN106219549-A, WO2018018654-A1, CN106219549-B
  • 发明人:   GUO H, HU Z, XU J, ZHAN Y
  • 专利权人:   UNIV SUZHOU ZHANGJIAGANG IND TECHNOLOGY, UNIV SOOCHOW ZHANGJIAGANG IND TECHNOLOGI, UNIV SOOCHOW
  • 国际专利分类:   B82Y040/00, C01B031/36, B01J027/224, C01B032/956
  • 专利详细信息:   CN106219549-A 14 Dec 2016 C01B-031/36 201712 Pages: 7 Chinese
  • 申请详细信息:   CN106219549-A CN10608157 29 Jul 2016
  • 优先权号:   CN10608157

▎ 摘　　要

NOVELTY - Preparation of silicon carbide nanowire comprises mixing silicon and silicon dioxide, adding graphene, mixing, placing in vacuum sintering furnace filled with argon, vacuum sintering to 1400-1500 degrees C for 2.5 hours, then 2 hours and cooling to room temperature for 2.5 hours. USE - Method for preparing silicon carbide nanowire (claimed). ADVANTAGE - The nanowire has good linearity.