▎ 摘　　要

NOVELTY - Preparing epitaxial wafer, involves providing a substrate, growing an aluminum nitroxide layer on the substrate sequentially a buffer layer, a gallium nitride layer of three-dimensional growth, a non-doped gallium nitride layer, an N-type doped N-graphene layer and a P-type graphene oxide layer, and a stress release layer, multi-quantum well layer, electron blocking layer and an electron blocking sheet. The hydrogen and nitrogen are introduced to perform surface treatment on the aluminum oxide layer before growing the buffer layer. USE - The method is useful for preparing epitaxial wafer in LED chip. ADVANTAGE - The method solves the problem that the substrate surface will absorb particles and water vapor and other impurities after growing the aluminum nitride layer in the existing technology, can improve the crystal quality of the gallium nitride epitaxial layer growth, and improves the appearance of the epitaxial wafer and the yield and brightness of the chip. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: epitaxial wafer; and LED chip. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of an epitaxial wafer preparation method. (Drawing includes non-English language text).