1. 平台首页
  2. 国际专利信息
  • 专利标题:   Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.
  • 专利号:   WO2022168648-A1, JP2022120690-A
  • 发明人:   WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M
  • 专利权人:   TOKYO ELECTRON LTD
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/44, H01L021/205
  • 专利详细信息:   WO2022168648-A1 11 Aug 2022 C23C-016/44 202277 Pages: 37 Japanese
  • 申请详细信息:   WO2022168648-A1 WOJP002309 24 Jan 2022
  • 优先权号:   JP017751

▎ 摘　　要

NOVELTY - Substrate processing method for processing a substrate involves loading the substrate into a processing container, forming a first carbon film on the substrate with plasma of a first mixed gas containing a carbon-containing gas while the inside of the processing container is maintained at a first pressure, and changing the inside of the processing container to a second pressure higher than the first pressure. USE - The substrate processing method is used for processing a substrate. ADVANTAGE - The method reduces the generation of particles. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a substrate processing equipment.