▎ 摘　　要

NOVELTY - The UV photoelectric detector has an N type doped gallium nitride layer (1), an insulating layer (2), a nitride layer (3), a graphene layer (4) and a quantum dot layer (5), which are arranged from bottom to top. A pair of side electrodes (6,7) is set on graphene layer and gallium nitride layer. The area of insulating layer is 10% larger than area of gallium nitride layer. The area of side electrode is less than the area of graphene layer. The area of graphene layer is less than the area of boron nitride layer. USE - Quantum dot light-doped graphene/boron nitride/gallium nitride UV photoelectric detector. ADVANTAGE - The light doping of graphene quantum point is performed to optimize the device performance. The photoelectric detector has low dark current, UV wave band with high response degree and detection, and simple device technique. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the manufacturing method of the quantum dot light-doped graphene/boron nitride/gallium nitride UV photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the quantum dot light-doped graphene/boron nitride/gallium nitride UV photoelectric detector. N type doped gallium nitride layer (1) Insulating layer (2) Nitride layer (3) Graphene layer (4) Quantum dot layer (5) Side electrodes (6,7)