▎ 摘　　要

NOVELTY - The method involves forming a nitride base layer on a substrate. A mask layer is formed on the nitride base layer, where the mask layer is made of graphene. Multiple openings are formed in an upper side of the mask layer. Another mask layer is formed in a nitride single crystal layer, where the latter mask layer is made of graphene. A buffer layer is formed on the nitride base layer. A conductivity-type nitride semiconductor layer is formed on a bottom surface of a conductivity-type contact layer. An active layer is formed on the conductivity-type contact layer. USE - Method for manufacturing nitride single crystal of a semiconductor LED. ADVANTAGE - The method enables reducing lattice defect on the nitride single crystal layer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor LED.