▎ 摘　　要

NOVELTY - In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises (i) preparing graphene-based field effect transistor, where the graphene micro zone is provided with a narrow edge, providing back gate on the field effect transistor; (ii) applying voltage or current source on both ends of graphene electrode, regulating the back gate voltage, to modulate the resistance of the narrow edged micro zone for generating high temperature narrow edged micro-zone; and (iii) allowing the growth of the material layer on the surface of narrow edged micro-zone. USE - The method is useful for in-situ growth of graphene-based field effect transistor micro zone heating materials (claimed). ADVANTAGE - The method is simple, graphical and suitable for industrialization; can control the shape of the material growth area; and has good uniformity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device used for in-situ growth of graphene-based field effect transistor micro zone heating materials comprising graphene-based field effect transistor, graphene with a the narrow micro structure, a back gate provided on the back surface of field effect transistor, a material layer, for in situ growth of narrow edged micro zone.