• 专利标题:   Producing double-layer graphene useful in electronic device comprises preparing catalyst substrate, forming first graphene layer by providing carbon source on the catalyst substrate, and forming diffusion site in the first graphene.
  • 专利号:   KR2021055903-A, KR2274206-B1
  • 发明人:   KIM M J, LEE H S, JANG S G, AHN S, RYU J H
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   B01J023/72, B01J023/755, B01J037/34, C01B032/186
  • 专利详细信息:   KR2021055903-A 18 May 2021 C01B-032/186 202149 Pages: 14
  • 申请详细信息:   KR2021055903-A KR142245 08 Nov 2019
  • 优先权号:   KR142245

▎ 摘  要

NOVELTY - Producing double-layer graphene comprises preparing catalyst substrate, forming a first graphene layer by providing a carbon source on the catalyst substrate, forming a diffusion site in the first graphene layer through plasma sputtering, and forming second graphene layer by providing a carbon source between the first graphene layer and the catalyst substrate through the diffusion site. USE - The graphene is useful in electronic device, barrier materials, heat dissipation materials, and transparent electrodes. ADVANTAGE - The graphene has high carrier mobility, high thermal conductivity, high Young's modulus, and high transparency. The method prevents physical damage and defect generation.