• 专利标题:   Growing graphene on insulation substrate involves cleaning insulation substrate and dispersed graphene micro-particles, placing product in hot filament chemical gas phase deposition system and carried out growth process.
  • 专利号:   CN105568251-A
  • 发明人:   GU C, LI J, LI W, XU S
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C23C016/26, C23C016/44
  • 专利详细信息:   CN105568251-A 11 May 2016 C23C-016/26 201652 Pages: 9 English
  • 申请详细信息:   CN105568251-A CN10008637 06 Jan 2016
  • 优先权号:   CN10008637

▎ 摘  要

NOVELTY - Growing graphene on insulation substrate involves cleaning insulation substrate and dispersed graphene micro-particles. Insulation substrate deposited graphene micro-particles is placed in hot filament chemical gas phase deposition system and carried out contact and growth process. USE - Method for growing graphene on insulation substrate (claimed). ADVANTAGE - The method enables to grow graphene on insulation substrate ensures less process difficulty and no photo-etching.