• 专利标题:   Stable doping large area graphene transparent electric conduction film scale manufacturing method, involves combining transparent substrate with graphite, and separating transparent substrate form initial substrate.
  • 专利号:   CN104409177-A, CN104409177-B
  • 发明人:   CHENG H, MA L, REN W
  • 专利权人:   INST METAL RES CHINESE ACAD SCI, INST METAL RES CHINESE ACAD SCI
  • 国际专利分类:   H01B013/00
  • 专利详细信息:   CN104409177-A 11 Mar 2015 H01B-013/00 201533 Pages: 10 Chinese
  • 申请详细信息:   CN104409177-A CN10709308 28 Nov 2014
  • 优先权号:   CN10709308

▎ 摘  要

NOVELTY - The method involves covering a surface of an interlayer structure with a large area graphene transparent electric conduction film. A graphene transparent substrate is matched with a graphite surface. The transparent substrate is separated form with a graphene substrate. Large area graphene transparent electric conduction film stable doping process is performed. The transparent substrate is combined with graphite. The transparent substrate is separated from an initial substrate. The graphene is mixed with metal, metal chloride, metal oxide, acid and organic molecule materials. USE - Stable doping large area graphene transparent electric conduction film scale manufacturing method. ADVANTAGE - The method enables realizing stable doping large area graphene transparent electric conduction film scale manufacturing operation in easy and simple manner and improving manufacturing efficiency, thin film conductivity and doping effect and preventing pollution occurrence. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a stable doping large area graphene transparent electric conduction film scale manufacturing method.'(Drawing includes non-English language text)'