1. 平台首页
  2. 国际专利信息
  • 专利标题:   Boron/nitrogen co-doped graphene used for semiconductor for electronic circuit for field-effect transistor, is obtained by chemically bonding alkali metal or alkaline earth metal of specified group with carbon precursor, and doping.
  • 专利号:   US2015213915-A1, KR2015089275-A, KR1611218-B1, US9490040-B2
  • 发明人:   BAEK J, JUNG S, JEON I, JONG B B, MIN J S, YUP J
  • 专利权人:   UNIST ACADIND RES CORP, UNIST ACADIND RES CORP, UNIST ULSAN NAT SCI TECHNOLOGY INST
  • 国际专利分类:   H01B001/04, C01B031/02, B82Y030/00, B82Y040/00, C01B031/04, H01L021/02, H01L029/16, H01L029/66, H01L029/786
  • 专利详细信息:   US2015213915-A1 30 Jul 2015 H01B-001/04 201554 Pages: 15 English
  • 申请详细信息:   US2015213915-A1 US605738 26 Jan 2015
  • 优先权号:   KR009713

▎ 摘　　要

NOVELTY - Boron/nitrogen co-doped graphene is obtained by chemically bonding alkali metal of group 1 or alkaline earth metal of group 2 with carbon precursor, and doping. USE - Boron/nitrogen co-doped graphene is used for semiconductor for electronic circuit for field-effect transistor. ADVANTAGE - The boron/nitrogen co-doped graphene has excellent conductivity, electrical property, mechanical and chemical stability, physicochemical property, thermal conductivity, and dispersibility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for production of doped graphene.