▎ 摘　　要

NOVELTY - A doped, passivated graphene nanomesh comprises a graphene nanomesh comprising nanoholes formed in a graphene sheet, and carbon atoms which are formed adjacent to the nanoholes; a passivating element bonded to the carbon atoms; and a dopant bonded to the passivating element. The dopant comprises one of an electron-donating element for making the graphene nanomesh, an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh. USE - The doped, passivated graphene nanomesh is useful in field effect transistor (claimed), and semiconductor device, graphene field effect transistor, and metal-oxide-semiconductor field-effect transistor (MOSFET). ADVANTAGE - The method of making semiconductor device including the doped, passivated graphene nanomesh, may provide ultra-stable doping of the graphene nanomesh, and can inhibit fluctuation of the dopant concentration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a field effect transistor comprising the doped, passivated graphene nanomesh.