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  • 专利标题:   Graphene substrate used in graphene electronic device, has base substrate which is insulating monocrystal substrate provided with monoatomic step structure on surface.
  • 专利号:   WO2011027585-A1
  • 发明人:   OGINO TOSHIO, TSUKAMOTO TAKAHIRO, KOYAMA KOUJI, SUNAGAWA KAZUHIKO
  • 专利权人:   NAMIKI SEIMITSU HOSEKI KK, UNIV YOKOHAMA NAT CORP
  • 国际专利分类:   B82B001/00, C01B031/02, C30B029/20, H01L029/06, H01L029/16
  • 专利详细信息:   WO2011027585-A1 10 Mar 2011 C01B-031/02 201122 Pages: 28 Japanese
  • 申请详细信息:   WO2011027585-A1 WOJP055017 24 Mar 2010
  • 优先权号:   JP205126

▎ 摘　　要

NOVELTY - The graphene substrate has a base substrate (1) which is an insulating monocrystal substrate. The insulating monocrystal substrate has a monoatomic step (2) structure on the surface. The base substrate is a titanium oxide substrate, a quartz substrate, a zinc oxide substrate, a diamond substrate or a sapphire substrate. USE - Graphene substrate used in graphene electronic device (claimed). ADVANTAGE - The graphene substrate that is flat at atomic level is provided. The adhesiveness of the graphene to base substrate is improved, since the surface atomic arrangement is controlled. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacturing method of graphene substrate; and (2) manufacturing method of graphene electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the graphene substrate. Base substrate (1) Monoatomic step (2) Graphene (3) Iron-particles (4)