▎ 摘　　要

NOVELTY - Manufacture of graphene laminated structure involves plasma-treating a surface of hexagonal boron nitride sheet using a fluorine-based gas plasma, depositing the hexagonal boron nitride sheet on a graphene sheet, and forming an insulating layer (317) on a surface of the surface-treated hexagonal boron nitride sheet. USE - Manufacture of graphene laminated structure used for electronic devices (claimed) e.g. top gate transistor used for light-emitting diode. ADVANTAGE - The method enables the manufacture of graphene laminated structure with efficient formation of insulating layer having excellent damage-proof property, high dielectric constant, and desired mechanical-electrical characteristics, by simple process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for electronic device, which consists of the graphene laminated structure. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the field-effect transistor. Substrate (311) Silica substrate (312) Channel layer (313) Source electrode (314) Insulating layer (317)