• 专利标题:   Multi-level stacked graphene structure, useful e.g. in electronic devices, comprises first graphene level overlayed on substrate, first interlayer overlayed on first graphene level, and second graphene level overlayed on first interlayer.
  • 专利号:   WO2014150584-A1
  • 发明人:   DAVIS M A
  • 专利权人:   SOLAN LLC, DAVIS M A
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   WO2014150584-A1 25 Sep 2014 C01B-031/02 201465 Pages: 42 English
  • 申请详细信息:   WO2014150584-A1 WOUS023692 11 Mar 2014
  • 优先权号:   US793653P

▎ 摘  要

NOVELTY - Structure comprises: a substrate; a first graphene level overlayed on the substrate, where the first graphene level comprises one or more graphene stacks, and a first graphene stack in the first graphene level forms a first graphene based nanostructure; a first interlayer overlayed on the first graphene level; and a second graphene level overlayed on the first interlayer, where the second graphene level comprises one or more graphene stacks. A second graphene stack in the second graphene level forms a second graphene based nanostructure. USE - The structure i.e. multi-level stacked graphene structure including graphene quantum dots, graphene nanoribbons, graphene nanonetworks, graphene plasmonics and graphene super-lattices is useful: in electronic devices, super-strong composite materials, and energy generation and storage applications; and for making a multiple band gap device including multiple band gap photovoltaic device, multiple band gap photodetector and multiple band gap LED. ADVANTAGE - The structure: has good chemical, mechanical, electronic and optical properties, including carrier mobility, Young's elastic modulus and thermal conductivity; is easy to pattern and integrate with other elements or components; and provides versatile and efficient band gap device.