▎ 摘　　要

NOVELTY - The method (200) involves providing (210) a substrate. The substrate is etched (220) to form a cavity structure. A silicon dioxide layer is grown (230) on top of the substrate. A thin metal catalyst layer is deposited (240) on top of the silicon substrate. A graphene layer is synthesized (250) on top of the metal catalyst layer. An epoxy-based photoresist is deposited (260). The thin metal catalyst layer, the silicon dioxide layer and the photoresist layer are removed (270) from the substrate. The epoxy-based photoresist is patterned (280) to remove from the cavity structure. The substrate is etched with a combination of sulphur hexafluoride and octaflourocyclobutane plasma. USE - Method of forming graphene bump structure e.g. graphene nanostructure in three dimensional format used in electronics, sensor and electronic packaging. ADVANTAGE - The epoxy-based photoresist is patterned to remove from the cavity structure. The thin metal catalyst layer and the silicon dioxide layer are removed from the substrate by wet etching process. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method of forming graphene bump structure. Method of forming graphene bump structure (200) Step for providing a substrate (210) Step for etching the substrate to form a cavity structure (220) Step for growing a silicon dioxide layer on top of the substrate (230) Step for depositing a thin metal catalyst layer on top of the silicon substrate (240) Step for synthesizing a graphene layer on top of the metal catalyst layer (250) Step for depositing an epoxy-based photoresist (260) Step for removing the thin metal catalyst layer, the silicon dioxide layer and photoresist layer from the substrate (270) Step for patterning the epoxy-based photoresist to remove from the cavity structure (280)