▎ 摘　　要

NOVELTY - Preparing porous graphene thin film, involves mixing graphite powder (2.5 g, 99.85%) and 1-methyl-2-pyrrolidone in beaker to form graphene dispersion liquid; cleaning silicon wafer, putting the washed silicon wafer in ethanol, distilled water for ultrasonic cleaning; removing 10 ml graphene dispersion liquid with 20 ml injector, controlling the heating plate and substrate silicon wafer at 200 degrees C; and performing electrostatic spraying and substrate heating method on the substrate surface of the silicon substrate to obtain the porous graphene film. USE - For preparing porous graphene thin film (claimed) which is used in gas sensor, lithium battery and catalytic agent. ADVANTAGE - The process is simple and easy; provides low device requirement. The obtained graphene thin film has a porous structure, provides good adhesion; and has high specific surface area. DETAILED DESCRIPTION - Preparing porous graphene thin film, involves: adding graphite powder (2.5 g, 99.85%) in 250 ml beaker, and then adding 1-methyl-2-pyrrolidone (NMP) (100 ml) to give graphite-NMP suspension, putting the obtained suspension in multilayer insulating plastic wrap, and subjecting to discontinuous ultrasonic treatment at room temperature for 72 hours by using low power ultrasonic cleaner to obtain graphene dispersion liquid, after 16 hours, centrifuging the dispersion liquid for 30 minutes, where the rotating speed is 8000 revolution per minute (rpm), absorbing upper layer liquid in the clean glass bottle; cleaning silicon wafer by soaking oxide layer on the surface of the silicon wafer in ethyl acetate and acetone, respectively for 30 minutes, putting the washed silicon wafer in ethanol, distilled water for ultrasonic cleaning, then using an infrared lamp; removing 10 ml graphene dispersion liquid with 20 ml injector, where the injector is fixed on the computer micro-injection pump having 0.2 ml/propelling speed of constant speed to push liquid to spinning nozzle polytetrafluoroethylene fine pipe, controlling the heating plate and substrate silicon wafer at 200 degrees C, adjusting the high-voltage power supply voltage at 8.6 kV, by electro-spinning nozzle spray, spraying to the substrate, subjecting to silicon slice liquid film treatment to volatilize the solvent, then drying for 10 hours by controlling the spray time to obtain the porous graphene film with different thickness.